Study of InGaP/InGaAs double doped channel heterostructure field-effect transistors (DDCHFETs)

Semiconductor Science and Technology

Volumn 19, Issue 1, 2004, Pages 87-92

  Chuang, Hung Ming ^a   Cheng, Shiou Ying ^b   Lai, Po Hsien ^a   Liao, Xin Da ^a   Chen, Chun Yuan ^a   Yen, Chih Hung ^a   Liu, Rong Chau ^c   Liu, Wen Chau ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b ORIENTAL INSTITUTE OF TECHNOLOGY   (Taiwan)

^c CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CARRIER CONCENTRATION; CARRIER MOBILITY; COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRON TRANSPORT PROPERTIES; HETEROJUNCTIONS; MICROWAVES; POISSON EQUATION; SCHOTTKY BARRIER DIODES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; TRANSCONDUCTANCE;

CARRIER CONFINEMENT; DOUBLE DOPED CHANNEL HETEROSTRUCTURE FIELD EFFECT TRANSISTORS; DRAIN CURRENTS;

FIELD EFFECT TRANSISTORS;

EID: 0345866737     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/1/015     Document Type: Article

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