Fabrication and characteristics of 0.12 μm AlGaAs/InGaAs/GaAs pseudomorphic HEMT using a silicon nitride assisted process

Semiconductor Science and Technology

Volumn 19, Issue 12, 2004, Pages 1416-1421

  Lim, Jong Won ^a   Ahn, Ho Kyun ^a   Ji, Hong Gu ^a   Chang, Woo Jin ^a   Mun, Jae Kyoung ^a   Kim, Haecheon ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CARRIER CONCENTRATION; CURRENT DENSITY; DRY ETCHING; ELECTRON BEAM LITHOGRAPHY; HIGH ELECTRON MOBILITY TRANSISTORS; OSCILLATIONS; TRANSCONDUCTANCE;

OSCILLATION FREQUENCY; PARASITIC CAPACITANCE; PARASITIC GATE RESISTANCE; WET ETCHING;

SILICON NITRIDE;

EID: 10444250305     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/12/015     Document Type: Article

References (18)

1. Nguyen L D, Brown A S, Thompson M A and Jelloian L M 1992 IEEE Trans. Electron Device. 39 2007
2. Kordos Peter 1998 IEEE Int. Conf. on Microwave and Millimetre Wave Technology Proc. p 88
3. Goel Jitendra, Tan K L, Stones D I, Chan R W, Streit D C, Peratoner S and Schellenberg J 1992 IEEE MTT-S p 587
4. Tan K L, Dia R M, Streit D C, Shaw L K, Han A C, Sholley M D, Liu P H, Trinh T Q, Lin Tzuenshyan and Yen H C 1991 IEEE Electron Device Lett. 12 23
5. Cao Xin, Boyd Euan, McLelland Helen, Thorns Stephen, Holland Martin, Stanley Colin and Thayne lain 2003 11th GaAs Symp. p 13
6. Jones W J, Ageno S K and Sato T Y 1987 Electron. Lett. 23 845
7. Lee J H, Yoon H S, Park C S and Park H M 1995 IEEE Trans. Electron Device Lett. 16 271
8. Lee J H, Yoon H S, Park B S, Park C S, Choi S S and Pyun K E 1996 ETRI J. 18 171
9. Lee J H, Yoon H S, Shim J Y and Kim H 2003 Thin Solid Films 435 139
10. Chen Y, Macintyre D and Thorns S 2001 Microelectron. Eng. 57-58 939
11. Moran D, Boyd E, McLelland H, Elgaid K, Chen Y, Macintyre D S, Thorns S, Stanley C R and Thayne I G 2003 Microelectron. Eng. 67-68 769
12. Studebaker L G 1994 IEEE GaAs IC Symp. Tech. Digest p 321
13. Mateos J, González T, Pardo D, Hoel V and Cappy A 1999 Semicond. Sci. Technol. 14 864
14. Lee J L, Kim D, Maeng S J, Kang J Y and Lee Y T 1993 J. Appl. Phys. 73 3539
15. Nannichi Y, Fan J F, Oigawa H and Koma A 1988 Japan. J. Appl. Phys. 27 L2369
16. Ohshima T, Yoshida M, Shigemasa R, Tsunotani M and Kimura T 2000 Japan. J. Appl. Phys. 39 5052
17. Chou Y C, Nam P, Li G P, Kim L K, Grundbacher R, Ahlers E, Ra Y, Xu Q, Biedenbender M B and Oki A 2002 Reliability Physics Symp. Proc. p 235
18. Schuler O, Fourré H, Fauquembergue R and Cappy A 1996 8th International Conference on Indium Phosphide and Related Materials p 646