Cathodoluminescence, photoluminescence, and optical absorbance spectroscopy of aluminum gallium nitride (AlxGa1-xN) films

Journal of Materials Research

Volumn 13, Issue 9, 1998, Pages 2480-2495

  Robins, Lawrence H ^a   Lowney, Jeremiah R ^a   Wickenden, Dennis K ^b  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b JOHNS HOPKINS UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; BAND STRUCTURE; CATHODOLUMINESCENCE; CRYSTAL IMPURITIES; ENERGY GAP; FILM GROWTH; INTERFACES (MATERIALS); LIGHT ABSORPTION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; RESIDUAL STRESSES; SEMICONDUCTING ALUMINUM COMPOUNDS;

ALUMINUM GALLIUM NITRIDE;

SEMICONDUCTING FILMS;

EID: 0032162579     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.1998.0348     Document Type: Article

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