Properties of AlxGa1-xN layers grown by plasma-assisted molecular-beam epitaxy under Ga-rich conditions

Applied Physics Letters

Volumn 81, Issue 12, 2002, Pages 2178-2180

  He, L ^a   Reshchikov, M A ^a   Yun, F ^a   Huang, D ^a   King, T ^a   Morkoc H ^a  

^a Virginia Commonwealth University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARRIVAL RATES; GA-RICH CONDITIONS; MOLE FRACTION; NON-RADIATIVE RECOMBINATIONS; PHOTOLUMINESCENCE QUANTUM EFFICIENCY; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; PROPERTIES OF AL; SAPPHIRE SUBSTRATES;

ALUMINUM; EPITAXIAL GROWTH; GALLIUM ALLOYS; MOLECULAR BEAMS; SAPPHIRE;

GALLIUM;

EID: 79956044219     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1506206     Document Type: Article

References (16)

1. S. Strite and H. Morkoç, J. Vac. Sci. Technol. B 10, 1237 (1992). jvb JVTBD9 0734-211X
2. F. Omnes, N. Marenco, B. Beaumont, and Ph. De Mierry, J. Appl. Phys. 86, 5286 (1999). jap JAPIAU 0021-8979
3. S. Nakamura, T. Mukai, and M. Senoh, Appl. Phys. Lett. 64, 1687 (1994). apl APPLAB 0003-6951
4. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, Appl. Phys. Lett. 70, 616 (1997). apl APPLAB 0003-6951
5. M. Razeghi and A. Rogalski, J. Appl. Phys. 79, 7433 (1996). jap JAPIAU 0021-8979
6. H. Morkoç, A. Di Carlo, and R. Cingolani, Solid-State Electron. 46, 157 (2002). sel SSELA5 0038-1101
7. Hadis Morkoç, in SiC Materials and Devices, Willardson and Beer Series, Vol. 52, edited by Y. S. Park (Academic, New York, 1998), pp. 307-394.
8. G. Coli, K. K. Bajaj, J. Li, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 78, 1829 (2001). apl APPLAB 0003-6951
9. S. C. Choi, J.-H. Kim, J. Y. Choi, K. J. Lee, K. Y. Lim, and G. M. Yang, J. Appl. Phys. 87, 172 (2000). jap JAPIAU 0021-8979
10. J. R. Jenny, J. E. Van Nostrand, and R. Kaspi, Appl. Phys. Lett. 72, 85 (1998). apl APPLAB 0003-6951
11. E. Iliopoulos, K. F. Ludwig, Jr., T. D. Moustakas, and S. N. G. Chu, Appl. Phys. Lett. 78, 463 (2001). apl APPLAB 0003-6951
12. S. Nikishin, G. Kipshidze, V. Kuryatkov, K. Choi, Iu. Gherasoiu, L. Grave de Peralta, Z. Zubrilov, V. Tretyakov, K. Copeland, T. Prokofyeva, M. Holtz, R. Asomoza, Yu. Kudryavtsev, and H. Temkin, J. Vac. Sci. Technol. B 19, 1409 (2001). jvb JVTBD9 0734-211X
13. S. Yoshida, S. Misawa, and S. Gonda, J. Appl. Phys. 53, 6844 (1982). jap JAPIAU 0021-8979
14. H. Angerer, D. Brunner, F. Freudenberg, O. Ambacher, M. Stutzmann, R. Höpler, T. Metzger, E. Born, G. Dollinger, A. Bergmaier, S. Karsch, and H.-J. Körner, Appl. Phys. Lett. 71, 1504 (1997). apl APPLAB 0003-6951
15. F. Yun, M. A. Reshchikov, L. He, T. King, H. Morkoç, S. W. Novak, and L. Wei, J. Appl. Phys. (to be published).
16. A. P. Levanyuk and V. V. Osipov, Usp. Fiz. Nauk 133, 427 (1981) [ Sov. Phys. Usp. 24, 187 (1981)]. sop SOPUAP 0038-5670