Ferroelectric memory technology for aerospace applications

IEEE Aerospace Conference Proceedings

Volumn 5, Issue , 2000, Pages 377-383

  Philpy, S C ^a   Kamp, D A ^a   De Vilbiss, A D ^a   Isaacson, A F ^a   Derbenwick, G F ^a  

^a Celis Semiconductor Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AEROSPACE APPLICATIONS; CAPACITORS; CMOS INTEGRATED CIRCUITS; FERROELECTRIC DEVICES; IONS; MULTICHIP MODULES; PEROVSKITE; RADIATION HARDENING; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR STORAGE; STRONTIUM COMPOUNDS; TRANSISTORS;

CURIE TEMPERATURE; FERROELECTRIC MEMORY TECHNOLOGY; NONVOLATILE FERROELECTRIC MEMORY; RADIATION TOLERANCE; STRONTIUM BISMUTH TANTALATE FERROELECTRIC MEMORY CHIPS; TWO-CAPACITOR MEMORY CELL;

NONVOLATILE STORAGE;

EID: 0034432440     PISSN: 1095323X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (16)

1. Fatigue-free ferroelectric capacitors with platinum electrodes
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7. Total-dose radiation-induced degradation of thin film ferroelectric capacitors
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9. Total dose effect on ferroelectric PZT capacitors used as non-volatile storage elements
10. Neutron irradiation effects on PZT thin films for nonvolatile-memory applications
11. Single event upset immunity of strontium bismuth tantalate ferroelectric memories