Ferroelectric Pb(Zr,Ti)O3/Al2O3/4H-SiC diode structures

Applied Physics Letters

Volumn 81, Issue 5, 2002, Pages 895-897

  Koo, S M ^a   Khartsev, S I ^a   Zetterling, C M ^a   Grishin, A M ^a   Ostling M ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY KTH   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

4H SILICON CARBIDE; APPLIED BIAS; C-V CHARACTERISTIC; C-V HYSTERESIS; C-V MEASUREMENT; CAPACITANCE VOLTAGE; DIODE STRUCTURE; DOMINANT MECHANISM; HIGH FREQUENCY HF; INTERFACE STATE; MEMORY WINDOW; PB(ZR , TI)O; PREFERRED ORIENTATIONS; PULSED-LASER DEPOSITION TECHNIQUE; PZT; ROOM TEMPERATURE; SWEEP RATES;

FERROELECTRIC FILMS; LEAD; PULSED LASER DEPOSITION; SILICON CARBIDE; X RAY DIFFRACTION; ZIRCONIUM;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79956031694     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1497443     Document Type: Article

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