Semi-empirical local NMOS mobility model for 2-D device simulation incorporating screened minority impurity scattering

1994 International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits, NUPAD 1994

Volumn , Issue , 1994, Pages 3-6

  Mujtaba, S A ^a   Dutton, R W ^a   Scharfetter, D L ^b  

^a STANFORD UNIVERSITY   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS; IONIZATION; NUMERICAL MODELS;

2-D DEVICE SIMULATIONS; HIGHLY ACCURATE; IMPURITY SCATTERING; IONIZED IMPURITY SCATTERING; LOW FIELD MOBILITY; MOBILITY CURVES; REPULSIVE POTENTIALS; SEMI-EMPIRICAL;

INVERSION LAYERS;

EID: 84923867681     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NUPAD.1994.343504     Document Type: Conference Paper

References (7)

1. S. Takagi, M. Iwase, and A. Toriumi, "On the Universality of Inversion-layer Mobility in N-and P-channel MOSFETs, " in IEDM Tech. Dig., 1988, p. 398.
2. A. G. Sabnis and J. T. Clemens, "Characterization of the Electron Mobility in the Inverted <100> Si Surface, " in IEDM Tech. Dig., 1979, p. 18.
3. H. Wong, " 'Universal' Effective Mobility of Empirical Local Mobility Models for n-and p-Channel Silicon MOSFETs, " Solid-State Electronics, vol. 36, no. 2, pp. 179-188, 1993.
4. C. Lombardi, S. Manzini, A. Saporito. and M. Vanzi, "A Physically Based Mobility Model for Numerical Simulation of Nonplanar Devices, " IEEE Trans. Computer-Aided Design, vol. 7, no. 11, pp. 1164-1171, 1988.
5. T. Nishida, and C. T. Sah, "A Physically Based Mobility Model for MOSFET Numerical Simulation, " IEEE Trans. Electron Devices, vol. ED-34, no. 2, pp. 310-320, 1987.
6. K. Nishinohara, H. Tanimoto, N. Konishi, S. Takagi, and N. Shigyo, "Non-universal Roll-off of MOSFET Mobility and VDS Effect in Mobility Measurements, " presented at 1993 International Workshop on VLSI Process and Device Modeling (VPAD), Japan.
7. D. Scharfetter, "MOS Transistor Characterization of \ieff, Leff and Rseries-" 111 International Workshop on VLSI Process and Device Modeling (VPAD), Japan. 1991, p. 136.