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Volumn 20, Issue 6, 1999, Pages 283-285

On the number of fast interface states of standard CMOS technologies

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; MOS DEVICES; MOSFET DEVICES; SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0032649018     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.767099     Document Type: Article
Times cited : (7)

References (11)
  • 2
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    • Impact of fast interface states on effective mobility of heavily-doped MOSFET's
    • Bologna, Italy
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    • (1996) Proc. ESSDERC , vol.26 , pp. 833-836
    • Perron, L.1    Lacaita, A.2    Guzzetti, S.3    Bez, R.4
  • 3
    • 0030410570 scopus 로고    scopus 로고
    • Effective mobility in heavily doped n-MOSFET's: Measurement and models
    • S. Villa, A. L. Lacaita, L. Perron, and R. Bez, "Effective mobility in heavily doped n-MOSFET's: Measurement and models," in IEDM Tech. Dig., 1996, pp. 395-398.
    • (1996) IEDM Tech. Dig. , pp. 395-398
    • Villa, S.1    Lacaita, A.L.2    Perron, L.3    Bez, R.4
  • 4
    • 0031145655 scopus 로고    scopus 로고
    • Electron mobility in ULSI MOSFET's: Effect of interface traps and oxide nitridation
    • May
    • L. Perron, A. L. Lacaita, A. Pacelli, and R. Bez, "Electron mobility in ULSI MOSFET's: Effect of interface traps and oxide nitridation," IEEE Electron Device Lett., vol. 18, pp. 235-237, May 1997.
    • (1997) IEEE Electron Device Lett. , vol.18 , pp. 235-237
    • Perron, L.1    Lacaita, A.L.2    Pacelli, A.3    Bez, R.4
  • 5
    • 84907525396 scopus 로고    scopus 로고
    • Determination of interface state density of ULSI n-MOSFET by 1/f noise measurement
    • Stuttgart, Germany
    • S. Villa, G. De Geronimo, A. Pacelli, A. L. Lacaita, and A. Longoni, "Determination of interface state density of ULSI n-MOSFET by 1/f noise measurement," in Proc. ESSDERC, Stuttgart, Germany, 1997, vol. 27, pp. 332-335.
    • (1997) Proc. ESSDERC , vol.27 , pp. 332-335
    • Villa, S.1    De Geronimo, G.2    Pacelli, A.3    Lacaita, A.L.4    Longoni, A.5
  • 6
    • 0031701877 scopus 로고    scopus 로고
    • A physically-based model of the effective mobility in heavily-doped n-MOSFET's
    • Jan.
    • S. Villa, A. L. Lacaita, L. M. Perron, and R. Bez, "A physically-based model of the effective mobility in heavily-doped n-MOSFET's," IEEE Trans. Electron Devices, vol. 45, pp. 110-115, Jan. 1998.
    • (1998) IEEE Trans. Electron Devices , vol.45 , pp. 110-115
    • Villa, S.1    Lacaita, A.L.2    Perron, L.M.3    Bez, R.4
  • 7
    • 0032071615 scopus 로고    scopus 로고
    • Reliable extraction of MOS interface traps from low frequency CV measurements
    • May
    • A. Pacelli, A. L. Lacaita, S. Villa, and L. Perron, "Reliable extraction of MOS interface traps from low frequency CV measurements," IEEE Electron Device Lett., vol. 19, pp. 148-150, May 1998.
    • (1998) IEEE Electron Device Lett. , vol.19 , pp. 148-150
    • Pacelli, A.1    Lacaita, A.L.2    Villa, S.3    Perron, L.4
  • 8
    • 0020186076 scopus 로고
    • Charge accumulation and mobility in thin dielectric MOS transistors
    • C. G. Sodini, T. W. Ekstedt, and J. L. Moll, "Charge accumulation and mobility in thin dielectric MOS transistors," Solid-State Electron., vol. 25, pp. 833-841, 1982.
    • (1982) Solid-State Electron. , vol.25 , pp. 833-841
    • Sodini, C.G.1    Ekstedt, T.W.2    Moll, J.L.3
  • 9
    • 0028747841 scopus 로고
    • On the universality of inversion layer mobility in Si MOSFET's: Part I - Effects of substrate impurity concentration
    • Dec.
    • S. Takagi, A. Toriumi, M. Iwase, and H. Tango, "On the universality of inversion layer mobility in Si MOSFET's: Part I - Effects of substrate impurity concentration," IEEE Trans. Electron Devices, vol. 41, pp. 2357-2362, Dec. 1994.
    • (1994) IEEE Trans. Electron Devices , vol.41 , pp. 2357-2362
    • Takagi, S.1    Toriumi, A.2    Iwase, M.3    Tango, H.4
  • 10
    • 0027692894 scopus 로고
    • Simulation of linear and nonlinear electron transport in homogeneous silicon inversion layers
    • C. Jungemann, A. Emunds, and W. L. Engl, "Simulation of linear and nonlinear electron transport in homogeneous silicon inversion layers," Solid-State Electron., vol. 36, pp. 1529-1540, 1993.
    • (1993) Solid-State Electron. , vol.36 , pp. 1529-1540
    • Jungemann, C.1    Emunds, A.2    Engl, W.L.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.