-
1
-
-
0021201529
-
A reliable approach to charge-pumping measurements in MOS transistors
-
Jan.
-
G. Groeseneken, H. E. Maes, N. Beltrán, and R. F. Keersmaecker, "A reliable approach to charge-pumping measurements in MOS transistors," IEEE Trans. Electron Devices, vol. ED-31, pp. 42-53, Jan. 1984.
-
(1984)
IEEE Trans. Electron Devices
, vol.ED-31
, pp. 42-53
-
-
Groeseneken, G.1
Maes, H.E.2
Beltrán, N.3
Keersmaecker, R.F.4
-
2
-
-
0344839553
-
Impact of fast interface states on effective mobility of heavily-doped MOSFET's
-
Bologna, Italy
-
L. Perron, A. Lacaita, S. Guzzetti, and R. Bez, "Impact of fast interface states on effective mobility of heavily-doped MOSFET's," in Proc. ESSDERC, Bologna, Italy, 1996, vol. 26, pp. 833-836.
-
(1996)
Proc. ESSDERC
, vol.26
, pp. 833-836
-
-
Perron, L.1
Lacaita, A.2
Guzzetti, S.3
Bez, R.4
-
3
-
-
0030410570
-
Effective mobility in heavily doped n-MOSFET's: Measurement and models
-
S. Villa, A. L. Lacaita, L. Perron, and R. Bez, "Effective mobility in heavily doped n-MOSFET's: Measurement and models," in IEDM Tech. Dig., 1996, pp. 395-398.
-
(1996)
IEDM Tech. Dig.
, pp. 395-398
-
-
Villa, S.1
Lacaita, A.L.2
Perron, L.3
Bez, R.4
-
4
-
-
0031145655
-
Electron mobility in ULSI MOSFET's: Effect of interface traps and oxide nitridation
-
May
-
L. Perron, A. L. Lacaita, A. Pacelli, and R. Bez, "Electron mobility in ULSI MOSFET's: Effect of interface traps and oxide nitridation," IEEE Electron Device Lett., vol. 18, pp. 235-237, May 1997.
-
(1997)
IEEE Electron Device Lett.
, vol.18
, pp. 235-237
-
-
Perron, L.1
Lacaita, A.L.2
Pacelli, A.3
Bez, R.4
-
5
-
-
84907525396
-
Determination of interface state density of ULSI n-MOSFET by 1/f noise measurement
-
Stuttgart, Germany
-
S. Villa, G. De Geronimo, A. Pacelli, A. L. Lacaita, and A. Longoni, "Determination of interface state density of ULSI n-MOSFET by 1/f noise measurement," in Proc. ESSDERC, Stuttgart, Germany, 1997, vol. 27, pp. 332-335.
-
(1997)
Proc. ESSDERC
, vol.27
, pp. 332-335
-
-
Villa, S.1
De Geronimo, G.2
Pacelli, A.3
Lacaita, A.L.4
Longoni, A.5
-
6
-
-
0031701877
-
A physically-based model of the effective mobility in heavily-doped n-MOSFET's
-
Jan.
-
S. Villa, A. L. Lacaita, L. M. Perron, and R. Bez, "A physically-based model of the effective mobility in heavily-doped n-MOSFET's," IEEE Trans. Electron Devices, vol. 45, pp. 110-115, Jan. 1998.
-
(1998)
IEEE Trans. Electron Devices
, vol.45
, pp. 110-115
-
-
Villa, S.1
Lacaita, A.L.2
Perron, L.M.3
Bez, R.4
-
7
-
-
0032071615
-
Reliable extraction of MOS interface traps from low frequency CV measurements
-
May
-
A. Pacelli, A. L. Lacaita, S. Villa, and L. Perron, "Reliable extraction of MOS interface traps from low frequency CV measurements," IEEE Electron Device Lett., vol. 19, pp. 148-150, May 1998.
-
(1998)
IEEE Electron Device Lett.
, vol.19
, pp. 148-150
-
-
Pacelli, A.1
Lacaita, A.L.2
Villa, S.3
Perron, L.4
-
8
-
-
0020186076
-
Charge accumulation and mobility in thin dielectric MOS transistors
-
C. G. Sodini, T. W. Ekstedt, and J. L. Moll, "Charge accumulation and mobility in thin dielectric MOS transistors," Solid-State Electron., vol. 25, pp. 833-841, 1982.
-
(1982)
Solid-State Electron.
, vol.25
, pp. 833-841
-
-
Sodini, C.G.1
Ekstedt, T.W.2
Moll, J.L.3
-
9
-
-
0028747841
-
On the universality of inversion layer mobility in Si MOSFET's: Part I - Effects of substrate impurity concentration
-
Dec.
-
S. Takagi, A. Toriumi, M. Iwase, and H. Tango, "On the universality of inversion layer mobility in Si MOSFET's: Part I - Effects of substrate impurity concentration," IEEE Trans. Electron Devices, vol. 41, pp. 2357-2362, Dec. 1994.
-
(1994)
IEEE Trans. Electron Devices
, vol.41
, pp. 2357-2362
-
-
Takagi, S.1
Toriumi, A.2
Iwase, M.3
Tango, H.4
-
10
-
-
0027692894
-
Simulation of linear and nonlinear electron transport in homogeneous silicon inversion layers
-
C. Jungemann, A. Emunds, and W. L. Engl, "Simulation of linear and nonlinear electron transport in homogeneous silicon inversion layers," Solid-State Electron., vol. 36, pp. 1529-1540, 1993.
-
(1993)
Solid-State Electron.
, vol.36
, pp. 1529-1540
-
-
Jungemann, C.1
Emunds, A.2
Engl, W.L.3
-
11
-
-
0002395987
-
2 full-CMOS cells for 0.25-μm logic devices
-
2 full-CMOS cells for 0.25-μm logic devices," in IEDM Tech. Dig., 1994, pp. 941-943.
-
(1994)
IEDM Tech. Dig.
, pp. 941-943
-
-
Izawa, I.1
Katsube, M.2
Yohoyama, Y.3
Hashimoto, K.4
Kawamura, E.5
Shimizi, A.6
Takagi, H.7
Inoue, F.8
Shimizu, H.9
Furumochi, K.10
Goto, H.11
Kawamura, S.12
Watanabe, K.13
Aoyama, K.14
|