Interfacial properties of high- k dielectric CaZr Ox films deposited by pulsed laser deposition

Applied Physics Letters

Volumn 88, Issue 18, 2006, Pages

  Qiu, X Y ^a,b   Liu, H W ^a,c   Fang, F ^a,c   Ha, M J ^a,c   Liu, Z G ^a,c   Liu, J M ^a,c  

^a NANJING UNIVERSITY   (China)

^b SOUTHWEST UNIVERSITY   (China)

^c INTERNATIONAL CENTRE FOR MATERIALS PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; CALCIUM COMPOUNDS; PERMITTIVITY; PULSED LASER DEPOSITION; RAPID THERMAL ANNEALING; SILICA; SURFACE PROPERTIES;

CAO; CAZR OXFILMS; ELECTRICAL PERFORMANCES; INTERFACIAL LAYERS;

DIELECTRIC FILMS;

EID: 33646505782     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2200750     Document Type: Article

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