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Volumn 81, Issue 7, 2005, Pages 1431-1434

Thermal stability and dielectric properties of ultrathin CaZrOx films prepared by pulsed laser deposition

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; ANNEALING; CALCIUM COMPOUNDS; CRYSTALLIZATION; DIELECTRIC PROPERTIES; FIELD EFFECT TRANSISTORS; HIGH RESOLUTION ELECTRON MICROSCOPY; LASER BEAMS; LEAKAGE CURRENTS; MOS DEVICES; PULSED LASER DEPOSITION; SILICON; THERMODYNAMIC STABILITY; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 24944543536     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00339-004-3147-3     Document Type: Article
Times cited : (16)

References (14)
  • 6
    • 3042715207 scopus 로고    scopus 로고
    • Institute of Physics Publish Bristol and Philadelphia
    • M. Houssa: High-k gate dielectric (Institute of Physics Publish Bristol and Philadelphia 2004)
    • (2004) High-k Gate Dielectric
    • Houssa, M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.