Piezoresistive effect in GaN-AIN-GaN structures

Applied Physics Letters

Volumn 71, Issue 26, 1997, Pages 3817-3819

  Gaska, R ^a   Yang, J W ^a   Bykhovski, A D ^b   Shur, M S ^c   Kaminskii, V V ^d,e   Soloviov, S ^d  

^a APA Optronics   (United States)

^b University of Virginia ^*  (United States)

^c RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^d IOFFE INSTITUTE   (Russian Federation)

^e Powerco Srl   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001475554     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120514     Document Type: Article

References (7)

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4. Q. Chen, R. Gaska, M. Asif Khan, M. S. Shur, A. Ping, I. Adesida, J. Burm, W. J. Schaff, and L. F. Eastman, Electron. Lett. 33, 637 (1997).
5. J. S. Shor, L. Bemis, and A. D. Kurtz, IEEE Trans. Electron Devices 41, 661 (1994).
6. A. D. Bykhovski, B. L. Gelmont, and M. S. Shur, J. Appl. Phys. 81, 6332 (1997).
7. F. A. Ponce, D. P. Bour, W. T. Young, M. Saunders, and J. W. Steeds, Appl. Phys. Lett. 69, 337 (1996).