High performance and high reliability polysilicon thin-film transistors with multiple nano-wire channels

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 777-780

  Wu, Yung Chun ^a   Chang, Chun Yen ^a   Chang, Ting Chang ^b,c   Liu, Po Tsun ^a,c   Chen, Chi Shen ^a   Tu, Chun Hao ^a   Zan, Hsiao Wen ^a   Tai, Ya Hsiang ^a   Sze, Simon Min ^c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^c NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; GATES (TRANSISTOR); LEAKAGE CURRENTS; LIQUID CRYSTAL DISPLAYS; NANOSTRUCTURED MATERIALS; POLYSILICON; RELIABILITY; DRAIN CURRENT; FIELD EFFECT TRANSISTORS; GRAIN BOUNDARIES; POLYCRYSTALLINE MATERIALS; THIN FILM CIRCUITS; THIN FILM TRANSISTORS; THIN FILMS; WIRE;

KINK-EFFECT; NANO-WIRES; THREE-DIMENSIONAL CIRCUITS; TRI-GATE STRUCTURES;

THIN FILM TRANSISTORS; NANOWIRES;

GATE CONTROL; HIGH RELIABILITY; LIGHTLY-DOPED DRAINS; MULTI CHANNEL; NANO-WIRES; PERFORMANCE RELIABILITY; POLYSILICON THIN FILM TRANSISTORS; SPLIT CHANNELS; TRI-GATE STRUCTURES; WIRE CHANNELS;

EID: 21644476763     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

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4. B. Doyle, B. Boyanov, S. Datta, M. Doczy, S. Hareland, B. Jin, J. Kavalieros, T. Linton, R. Rios, and R. Chou, Symp. on VLSI Tech., 2003.