Study of annealing influence on electrical and morphological properties of ZnO:Ga thin films

Physica Status Solidi C: Conferences

Volumn 3, Issue 4, 2006, Pages 780-784

  Khranovskyy, V ^a,b   Grossner, U ^b   Lasorenko, V ^a   Lashkarev, G ^a   Svensson, B G ^b   Yakimova, R ^c  

^a FRANTSEVICH INSTITUTE FOR PROBLEMS OF MATERIALS SCIENCE   (Ukraine)

^b UNIVERSITY OF OSLO   (Norway)

^c LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; GALLIUM; MORPHOLOGY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; THIN FILMS; ZINC OXIDE; DOPING (ADDITIVES); METALLIC FILMS;

DOPANT ACTIVATION; MINIMA; THERMAL ANNEALING;

ANNEALING;

68.47.GH; 68.55.LN; 68.60.DV; 73.61.GA; 81.40.EF;

EID: 33646258243     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200564700     Document Type: Conference Paper

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