Atomistic tight-binding calculations for the investigation of transport in extremely scaled SOI transistors

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2003, Pages 229-232

  Stadele M ^a   Di Carlo, A ^b   Lugli, P ^b   Sacconi, F ^b   Tuttle, B ^c  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b UNIVERSITY OF ROME TOR VERGATA   (Italy)

^c BEHREND COLLEGE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; CARRIER MOBILITY; ELECTRIC CURRENTS; ELECTRON TUNNELING; ENERGY GAP; GATES (TRANSISTOR); HETEROJUNCTIONS; POISSON EQUATION; QUANTUM THEORY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SILICON ON INSULATOR TECHNOLOGY; ULTRATHIN FILMS; WAVE EQUATIONS;

SOURCE-DRAIN TRANSPORT; SUBBAND COUPLING;

TRANSISTORS;

EID: 0842288273     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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