Ab initio study of interface states and Schottky barriers at metal contacts to GaN(001)

Physica Status Solidi C: Conferences

Volumn 2, Issue 7, 2005, Pages 2540-2543

  Maxisch, T ^a,b   Baidereschi, A ^b  

^a Massachusetts Institute of Technology Cambridge   (United States)

^b EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONTACTS; ELECTRON TRANSITIONS; ELECTRONIC STRUCTURE; ENERGY GAP; FERMI LEVEL; INTERFACES (MATERIALS); INTERMETALLICS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR JUNCTIONS;

ELECTRONIC STATES; ELECTRONIC TRANSPORT; INTERMETALLIC INTERFACE STATES; SCHOTTKY BARRIERS;

GALLIUM NITRIDE;

EID: 27344434102     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200461382     Document Type: Conference Paper

References (9)

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