Gallium nitride power device design tradeoffs

Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 1531-1534

  Matocha, K ^a   Chow, T P ^a   Gutmann, R J ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

Breakdown voltage; Carrier lifetime; Depletion width; HFET; On state resistance; Polarization charge; Power devices; Termination

Indexed keywords

ALUMINUM GALLIUM NITRIDE; CARRIER LIFETIME; ELECTRIC BREAKDOWN; GALLIUM NITRIDE; III-V SEMICONDUCTORS; JUNCTION GATE FIELD EFFECT TRANSISTORS; POLARIZATION; SILICON CARBIDE; ELECTRIC RESISTANCE; IONIZATION;

DEPLETION WIDTHS; HFET; ON-STATE RESISTANCE; POLARIZATION CHARGES; POWER DEVICES; TERMINATION;

POWER SEMICONDUCTOR DEVICES; FIELD EFFECT TRANSISTORS;

EID: 0036435326     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.389-393.1531     Document Type: Conference Paper

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