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Volumn 20, Issue 5, 2002, Pages 2120-2125

Influences of reaction products on etch rates and linewidths in a poly-Si/oxide etching process using HBr/O2 based inductively coupled plasma

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY (SPECIFIC GRAVITY); ELECTRIC POWER SUPPLIES TO APPARATUS; ELECTRODES; EMISSION SPECTROSCOPY; HYDROGEN INORGANIC COMPOUNDS; INDUCTIVELY COUPLED PLASMA; OXYGEN; POLYSILICON; SILICA; SILICON WAFERS; SULFUR COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 0036026389     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1511216     Document Type: Article
Times cited : (16)

References (30)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.