10 Gbit/s data modulation using 1.3 μm InGaAs quantum dot lasers

Electronics Letters

Volumn 41, Issue 5, 2005, Pages 244-245

  Kuntz, M ^a   Fiol, G ^a   Lammlin M ^a   Schubert, C ^b   Kovsh, A R ^c   Jacob, A ^d   Umbach, A ^d   Bimberg, D ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b FRAUNHOFER HEINRICH HERTZ INSTITUTE   (Germany)

^c NL Nanosemiconductor GmbH   (Germany)

^d U2T PHOTONICS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DATA REDUCTION; GAIN MEASUREMENT; LASER BEAMS; NANOTECHNOLOGY; REFLECTION; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DEVICE MANUFACTURE; SIGNAL PROCESSING;

DATA MODULATION; EMISSION WAVELENGTH; RIDGE WAVEGUIDE (RWG); TUNNEL INJECTION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 15544368345     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20057712     Document Type: Article

References (15)

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