3-Channel InP-HEMT with low output conductance

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1999, Pages 315-318

  Maher, H ^a   Decobert, J ^a   Falcou, A ^a   Post, G ^a   Scavennec, A ^a  

^a OPTO+   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CONDUCTANCE; ELECTRON TRAPS; GATES (TRANSISTOR); IMPACT IONIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING;

OUTPUT CONDUCTANCE; RESIDUAL TRAPS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032685489     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (5)