Numerical analysis of surface-state effects on kink phenomena of GaAs MESFETs

IEEE Transactions on Electron Devices

Volumn 47, Issue 12, 2000, Pages 2270-2276

  Horio, Kazushige ^a   Wakabayashi, Akira ^a  

^a SHIBAURA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

2 D simulation; GaAs; Impact ionization; Kink; MESFET; Surface state; Trap

Indexed keywords

EID: 0000866208     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.887007     Document Type: Article

References (26)

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