Surface effects on turn-off characteristics of AlGaAs/GaAs HFETs

Electronics Letters

Volumn 37, Issue 11, 2001, Pages 719-720

  Tediosi, E ^a   Borgarino, M ^a   Verzellesi, G ^a   Sozzi, G ^a   Menozzi, R ^a  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; HETEROJUNCTIONS; HOLE TRAPS; HOT CARRIERS; MICROWAVE DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; TRANSIENTS;

SWITCHING TRANSIENTS;

GATES (TRANSISTOR);

EID: 0035942678     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20010478     Document Type: Article

References (7)

1. Relationship between gate lag, power drift and power slump of pseudomorphic high electron mobility transistors
2. Surface influence on the conductance DLTS spectra of GaAs MESFETs
3. Two-dimensional analysis of surface-state effects on turn-on characteristics in GaAs MESFETs
4. 0.75As/GaAs power HFETs under off-state and on-state electrical stress conditions
5. Breakdown and degradation issues and the choice of a safe load line for power HFET operation
6. Looking for an acceleration law for the high-field degradation of AlGaAs/GaAs power HFETs: Can MOSFETs help?
7. Modelling of semiconductor technology, devices, and systems