Electrical characterization of aluminum-oxynitride stacked gate dielectrics prepared by a layer-by-layer process of chemical vapor deposition and rapid thermal nitridation

IEICE Transactions on Electronics

Volumn E88-C, Issue 4, 2005, Pages 640-645

  Murakami, Hideki ^a,e   Mizubayashi, Wataru ^a,b,e,f   Yokoi, Hirokazu ^a,c   Suyama, Atsushi ^a,d   Miyazaki, Seiichi ^a,e,g,h  

^a HIROSHIMA UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c Matsushita Corp   (Japan)

^d ROHM CO LTD   (Japan)

^e JAPAN SOCIETY OF APPLIED PHYSICS   (Japan)

^f MIRAI Project   (Japan)

^g Surface Science Society of Japan   (Japan)

^h Materials Research Society   (United States)

Author keywords

Aluminum oxide; High k dielectrics; MISFET; Reliability

Indexed keywords

ALUMINA; CHEMICAL VAPOR DEPOSITION; GATES (TRANSISTOR); LEAKAGE CURRENTS; MISFET DEVICES; NITRIDING; RELIABILITY;

ALUMINUM OXIDE; HIGH-K DIELECTRICS; MISFET; STRESS-INDUCED LEAKAGE CURRENT (SILC) MODE;

DIELECTRIC MATERIALS;

EID: 33645566052     PISSN: 09168524     EISSN: 17451353     Source Type: Journal    
DOI: 10.1093/ietele/e88-c.4.640     Document Type: Article

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