Two-dimensional dopant profile of 0.2 μm metal-oxide-semiconductor field effect transistors

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 1, 2000, Pages 560-565

  Wang, X D ^a   Mahaffy, R ^a   Tan, K ^a   Shih, C K ^a   Lee, J J ^b   Foisy, M ^b  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^b MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ETCHING; SEMICONDUCTOR DOPING;

DOPANT SELECTIVE ETCHING (DSE); TWO-DIMENSIONAL DOPANT PROFILING;

MOSFET DEVICES;

EID: 0033684848     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591232     Document Type: Article

References (9)

1. The National Roadmap for Semiconductor Technology (Semiconductor Industry Association, 1997).
2. A. C. Diebold, M. R. Kump, J. J. Kopanski, and D. G. Seiler, J. Vac. Sci. Technol. B 14, 196 (1996).
3. M. Duane, NIST Characterization and Metrology Workshop, March, 1998.
4. T Takigami and M. Tanimoto, Appl. Phys. Lett. 58, 2288 (1996).
5. M. Barrett, M. Dennis, D. Tiffin, Y. Li, and C. K. Shin, IEEE Electron Device Lett. 16, 118 (1995).
6. A. McDonald et al. (unpublished)
7. E. T. Yu, M. B. Johnson, and J. M. Halbout, Appl. Phys. Lett. 61, 201 (1992).
8. Light shading is a standard SPM image display mode. The gray scale is defined in terms of the product of a fix vector (pointing opposite to the light illumination direction) and the gradient of the surface topography.
9. H. Dai, J. H. Hafner, A. G. Rinzler, D. T. Colbert, and R. E. Smalley, Nature (London) 384, 147 (1996).