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Volumn 80, Issue 15, 2002, Pages 2687-2689
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Two-dimensional dopant concentration profiles from ultrashallow junction metal-oxide-semiconductor field-effect transistors using the etch/transmission electron microscopy method
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Author keywords
[No Author keywords available]
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Indexed keywords
CALIBRATION CURVES;
DEVICE TECHNOLOGIES;
DOPANT CONCENTRATIONS;
EFFECTIVE GATE LENGTH;
ETCH RATES;
GATE EDGE;
JUNCTION DEPTH;
METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR;
MOS-FET;
SECONDARY ION MASS SPECTROSCOPY;
SOURCE/DRAIN JUNCTIONS;
SPREADING RESISTANCE PROBES;
ULTRA SHALLOW JUNCTION;
ARSENIC;
CONCENTRATION (PROCESS);
DIELECTRIC DEVICES;
ELECTRON MICROSCOPES;
ION IMPLANTATION;
MOSFET DEVICES;
SECONDARY ION MASS SPECTROMETRY;
SEMICONDUCTING SILICON COMPOUNDS;
SEMICONDUCTOR DEVICE MANUFACTURE;
SEMICONDUCTOR DOPING;
SILICON WAFERS;
TRANSISTORS;
TWO DIMENSIONAL;
SEMICONDUCTOR JUNCTIONS;
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EID: 79956029536
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1469652 Document Type: Article |
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Times cited : (5)
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References (9)
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