2D dopant profiling on 4H silicon carbide P+N junction by scanning capacitance and scanning electron microscopy

Microelectronics Reliability

Volumn 44, Issue 9-11 SPEC. ISS., 2004, Pages 1681-1686

  Buzzo, Marco ^a,b   Leicht, Markus ^a   Schweinböck, Thomas ^c   Ciappa, Mauro ^b   Stangoni, Maria ^b   Fichtner, Wolfgang ^b  

^a INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

^b ETH ZURICH   (Switzerland)

^c INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CAPACITANCE; DIELECTRIC MATERIALS; INSULATION; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SILICON CARBIDE; SURFACE ROUGHNESS;

DOPANT PROFILING; METAL OXIDE SEMICONDUCTOR STRUCTURES; MICROSECTIONING; SCANNING CAPACITANCE MICROSCOPY (SCM);

SEMICONDUCTOR JUNCTIONS;

EID: 4544301314     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2004.07.053     Document Type: Conference Paper

References (11)

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