In concentration and tilt of the a-plane (1 1 2̄ 0) InGaN/GaN film by TEM analysis

Physica B: Condensed Matter

Volumn 376-377, Issue 1, 2006, Pages 527-531

  Nakanishi, N ^a   Kusakabe, K ^a   Yamazaki, T ^a   Ohkawa, K ^a,b   Hashimoto, I ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

A plane InGaN GaN; HRTEM; SAD

Indexed keywords

ELECTRON DIFFRACTION; EPITAXIAL GROWTH; GALLIUM NITRIDE; SEMICONDUCTING INDIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY SPECTROSCOPY;

A-PLANE INGAN /GAN; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPY (HRTEM); SAD;

CRYSTAL DEFECTS;

EID: 33645149719     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2005.12.134     Document Type: Conference Paper

References (23)

1. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, S. Saito, T. Matsushita, Y. Sugimoto, and H. Kiyoku Appl. Phys. Lett. 69 1996 4056
2. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, and Y. Sugimoto Jpn. J. Appl. Phys. Part 2 35 1996 L73
3. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, and Y. Sugimoto Appl. Phys. Lett. 68 1996 2105
4. A. Usui, H. Sunakawa, A. Sasaki, and A. Yamaguchi Jpn. J. Appl. Phys. Part 2 36 1997 L899
5. O.H. Nam, M.D. Bremsev, T. Zheleva, and R.F. Davis Appl. Phys. Lett. 71 1997 2638
6. S. Nakamura, M. Senoh, S. Nagahama, T. Matsushita, H. Kiyoku, S. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and T. Mukai Jpn. J. Appl. Phys. Part 2 38 1999 L226
7. S. Chichibu, T. Azuhata, T. Sota, H. Sakai, T. Tanaka, and M. Koike Appl. Phys. Lett. 70 1997 2822
8. Y. Narukawa, Y. Kawakami, S. Fujita, S. Fujita, and S. Nakamura Phys. Rev. B 55 1997 R1938
9. M.D. Craven, S.H. Lim, F. Wu, J.S. Speck, and S.P. DenBaars Appl. Phys. Lett. 81 2002 469
10. H.M. Ng Appl. Phys. Lett. 80 2002 469
11. M.D. Craven, F. Wu, A. Chakraborty, and J.S. Speck Appl. Phys. Lett. 84 2004 1281
12. B.A. Haskell, F. Wu, S. Matsuda, M.D. Craven, P.T. Fini, S.P. DenBaars, J.S. Speck, and S. Nakamura Appl. Phys. Lett. 83 2003 1554
13. M.D. Craven, S.H. Lim, F. Wu, J.S. Speck, and S.P. DenBaars Appl. Phys. Lett. 81 2002 1201
14. B.A. Haskell, F. Wu, M.D. Craven, S. Matsuda, P.T. Fini, T. Fujii, K. Fujita, S.P. DenBaars, J.S. Speck, and S. Nakamura Appl. Phys. Lett. 83 2003 644
15. F.A. Ponce, D.P. Bour, W.T. Young, M. Saunders, and J.W. Steeds Appl. Phys. Lett. 69 1996 337
16. P. Vennéguès, B. Neaumont, M. Vaille, and P. Gibart Appl. Phys. Lett. 70 1997 2434
17. D. Gerthsen, E. Hahn, B. Neubauer, A. Rosenauer, O. Schön, M. Heuken, and A. Rizzi Phys. Status Solidi A 177 2000 144
18. P. Ruterana, S. Kret, A. Vivet, G. Maciejewski, and P. Dluzewski J. Appl. Phys. 91 2002 8979
19. T. Yamazaki, K. Kusakabe, N. Nakanishi, K. Ohkawa, I. Hashimoto, Phys. Status Solidi A, submitted.
20. J.C.H. Spence High-Resolution Electron Microscopy third ed. 2003 Oxford University Press Oxford
21. J.E. Northrup, and J. Neugebauer Phys. Rev. B 60 1999 R8473
22. P. Fini, H. Marchand, J.P. Ibbetson, S.P. DenBaars, U.K. Mishra, and J.S. Speck J. Crys. Growth 209 2000 581
23. T.M. Katona, P. Cantu, S. Keller, Y. Wu, J.S. Speck, and S.P. DenBaars Appl. Phys. Lett. 84 2004 5025