High mobility two-dimensional electron system on hydrogen-passivated silicon(111) surfaces

Applied Physics Letters

Volumn 87, Issue 5, 2005, Pages

  Eng, K ^a   McFarland, R N ^a   Kane, B E ^a  

^a LABORATORY FOR PHYSICAL SCIENCES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT SENSITIVE SURFACE; TWO-DIMENSIONAL ELECTRON SYSTEM; VACUUM CAVITY;

AMMONIUM COMPOUNDS; CARRIER MOBILITY; ENCAPSULATION; FIELD EFFECT TRANSISTORS; FLUORIDE MINERALS; PASSIVATION; VACUUM APPLICATIONS;

SILICON;

EID: 33645505583     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2001734     Document Type: Article

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