Preparation of atomically clean and flat Si(1 0 0) surfaces by low-energy ion sputtering and low-temperature annealing

Applied Surface Science

Volumn 220, Issue 1-4, 2003, Pages 293-297

  Kim, J C ^a,b   Ji, J Y ^b   Kline, J S ^a   Tucker, J R ^a   Shen, T C ^b  

^a University of Illinois at Urbana Champaign   (United States)

^b UTAH STATE UNIVERSITY   (United States)

Author keywords

Annealing; Ion sputtering; Scanning tunneling microscopy; Silicon; Surface contamination; Surface morphology

Indexed keywords

ANNEALING; ETCHING; LOW TEMPERATURE PHENOMENA; MORPHOLOGY; SCANNING TUNNELING MICROSCOPY; SPUTTERING; ULTRAHIGH VACUUM;

ION SPUTTERING;

SURFACE TREATMENT;

EID: 0142248233     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00826-2     Document Type: Article

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