Preparation of atomically clean and flat Si(1 0 0) surfaces by low-energy ion sputtering and low-temperature annealing

Applied Surface Science

Volumn 220, Issue 1-4, 2003, Pages 293-297

  Kim, J C ^a,b   Ji, J Y ^b   Kline, J S ^a   Tucker, J R ^a   Shen, T C ^b  

^a United States of America   (United States)

^b UTAH STATE UNIVERSITY   (United States)

Author keywords

Annealing; Ion sputtering; Scanning tunneling microscopy; Silicon; Surface contamination; Surface morphology

Indexed keywords

ANNEALING; ETCHING; LOW TEMPERATURE PHENOMENA; MORPHOLOGY; SCANNING TUNNELING MICROSCOPY; SPUTTERING; ULTRAHIGH VACUUM;

ION SPUTTERING;

SURFACE TREATMENT;

EID: 0142248233     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00826-2     Document Type: Article

References (22)

1. Henderson R.C., Marcus R.B., Polito W.J. J. Appl. Phys. 42:1971;1208.
2. Higashi G.S., Chabal Y.J., Trucks G.W., Raghavachari K. Appl. Phys. Lett. 56:1990;656.
3. Arima K., Endo K., Kataoka T., Oshikane Y., Inoue H., Mori Y. Appl. Phys. Lett. 76:2000;463.
4. Joyce B.A. Surf. Sci. 35:1973;1.
5. Zandvliet H.J.W., Elswijk H.B., van Loenen E.J., Tsong I.S.T. Phys. Rev. B46:1992;7581.
6. Bedrossian P., Klitsner T. Phys. Rev. Lett. 68:1992;646.
7. Swartzentruber B.S., Matzke C.M., Kendall D.L., Houston J.E. Surf. Sci. 329:1995;83.
8. Bedrossian P. Surf. Sci. 301:1994;223.
9. Al-Bayati A.H., Orrman-Rossiter K.G., Badheka R., Armour D.G. Surf. Sci. 237:1990;213.
10. Al-Bayati A.H., Orrman-Rossiter K.G., Armour D.G. Surf. Sci. 249:1991;293.
11. Bean J.C., Becker G.E., Petroff P.M., Seidel T.E. J. Appl. Phys. 48:1977;907.
12. Huang L.J., Lau W.M., Tang H.T., Lennard W.N., Mitchell I.V., Schultz P.J., Kasrai M. Phys. Rev. B50:1994;18453.
13. Lee S.M., Fell C.J., Marton D., Rabalais J.W. J. Appl. Phys. 83:1998;5217.
14. Shen T.-C., Avouris Ph. Surf. Sci. 390:1997;35.
15. Morita Y., Tokumoto H. Appl. Phys. Lett. 67:1995;2654.
16. Neuwald U., Hessel H.E., Feltz A., Memmert U., Behm R.J. Surf. Sci. 296:1993;L8.
17. Usuda K., Yamada K. J. Electrochem. Soc. 144:1997;3204.
18. W. Kern, Semiconductor International, April 1984, p. 94.
19. Ishizaka A., Shiraki Y. J. Electrochem. Soc. 133:1986;666.
20. Feil H., Zandvliet H.J.W., Tsai M.-H., Dow J.D., Tsong I.S.T. Phys. Rev. Lett. 69:1992;3076.
21. Chey S.J., Van Nostrand J.E., Cahill D.G. Phys. Rev. B52:1995;16696.
22. Gossmann H.-J., Schubert E.F. Crit. Rev. Solid State Mater. Sci. 18:1993;1.