Scanning ion deep level transient spectroscopy

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 158, Issue 1, 1999, Pages 464-469

  Laird, J S ^a   Bardos, R A ^a   Jagadish, C ^b   Jamieson, D N ^a   Legge, G J F ^a  

^a UNIVERSITY OF MELBOURNE   (Australia)

^b AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ELECTRON TRAPS; ION BOMBARDMENT; ION IMPLANTATION; PLASMAS;

SCANNING ION DEEP LEVEL SPECTROSCOPY (SIDLTS);

DEEP LEVEL TRANSIENT SPECTROSCOPY;

EID: 0033339978     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(99)00329-8     Document Type: Article

References (11)

1. S.M. Sze, Physics of Semiconductor Devices, 2nd ed., Wiley, New York, 1981.
2. P.M.Petroff, D.V. Lang, App. Phys. Lett. 31 (1977).
3. P.Blood, F. Orton, Electrical Characterisation of Majority Carriers.
4. O. Breitenstein, Mater. Sci. Eng. B 24 (1994) 28.
5. E.J. Kobetich, R. Katz, Phys. Rev. 170 (2) (1968) 391.
6. H.L. Bradt, B. Peters, Phy. Rev. 74 (1948) 1828.
7. P.A. Tove, W. Seibt, Nucl. Instr. and Meth. B (1967) 261.
8. J.B. England, M.A. Bentley, G.M. Field, D.M. Thompson, Nucl. Instr. and Meth. A 364 (1995) 537.
9. J.M. Dorkel, P.H. Leturq, Solid State Electronics 24 (9) (1981) 821.
10. H.M. van Driel, Phys. Rev. B 35 (15) (1987) 8166.
11. J.S. Laird, R.A. Bardos, C. Jagadish, G.J.F. Legge, Nucl. Instr. and Meth. B, to be submitted.