Scanning ion deep level transient spectroscopy: II. Ion irradiated Au-Si Schottky junctions

Journal of Physics D: Applied Physics

Volumn 39, Issue 7, 2006, Pages 1352-1362

  Laird, J S ^a,c   Jagadish, C ^b   Jamieson, D N ^a   Legge, G J F ^a  

^a UNIVERSITY OF MELBOURNE   (Australia)

^b AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^c CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; CAPACITANCE; DEFECTS; ION BOMBARDMENT; SCHOTTKY BARRIER DIODES; SENSITIVITY ANALYSIS;

EXPONENTIAL COMPONENTS; SCANNING ION DEEP LEVEL TRANSIENT SPECTROSCOPY (SIDLTS); SCHOTTKY JUNCTION;

DEEP LEVEL TRANSIENT SPECTROSCOPY;

EID: 33645048726     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/39/7/004     Document Type: Article

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