Towards a versatile DRIE: Silicon pit structures combined with electrochemical etch stop

Journal of Microelectromechanical Systems

Volumn 15, Issue 4, 2006, Pages 840-848

  Kurzawski, Petra ^a   Salo, Tomi ^a,b   Baltes, Henry ^a   Hierlemann, Andreas ^a  

^a ETH ZURICH   (Switzerland)

^b VAISALA OYJ   (Finland)

Author keywords

CMOS compatible; Deep reactive ion etching (DRIE); Electrochemical etch stop; Fabrication of membrane arrays

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTROCHEMISTRY; MASKS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON WAFERS;

DEEP-REACTIVE ION ETCHING; ELECTROCHEMICAL ETCHING; ETCH STOP;

REACTIVE ION ETCHING;

EID: 33645066781     PISSN: 10577157     EISSN: None     Source Type: Journal    
DOI: 10.1109/JMEMS.2006.878883     Document Type: Article

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