Electrochemical etch-stop technique for silicon membranes with p- and n-type regions and its application to neural sieve electrodes

Journal of Micromechanics and Microengineering

Volumn 12, Issue 3, 2002, Pages 265-270

  Wallman, Lars ^a   Bengtsson, Jonas ^a   Danielsen, Nils ^b   Laurell, Thomas ^a  

^a LUND INSTITUTE OF TECHNOLOGY   (Sweden)

^b LUND UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRIC FIELD EFFECTS; ELECTROCHEMICAL ELECTRODES; ELECTROCHEMISTRY; ELECTRONIC EQUIPMENT; PASSIVATION; POTASSIUM COMPOUNDS; SILICON;

NEURAL SIEVE ELECTRODES;

ETCHING;

EID: 0036571726     PISSN: 09601317     EISSN: None     Source Type: Journal    
DOI: 10.1088/0960-1317/12/3/311     Document Type: Article

References (12)

1. Silicon as a mechanical material
2. Bulk silicon holding structures for mounting of optical fibers in V-grooves
3. Electrochemical etch-stop characteristics of TMAH-IPA solutions
4. Electrochemical etch-stop in TMAH without externally applied bias
5. A two-step electrochemical etch-stop to produce freestanding bulk-micromachined structures
6. Study of bias-dependent etching of Si in aqueous KOH
7. On the anodic passivation of silicon in aqueous KOH solutions
8. Optimization of a three-electrode electrochemical etch-stop process
9. A model for the etch-stop location on reverse-biased pn junctions
10. Passivation analysis of micromechanical silicon structures obtained by electrochemical etch-stop
11. The geometric design of micromachined silicon sieve electrodes influences functional nerve regeneration
12. Perforated silicon nerve chips with doped registration electrodes: In vitro performance and in vivo operation