Defects and doping in III-V nitrides

Materials Science Forum

Volumn 258-263, Issue PART 1, 1997, Pages 19-26

  Van De Walle, Chris G ^a   Neugebauer, Jörg ^b  

^a PALO ALTO RESEARCH CENTER   (United States)

^b FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT   (Germany)

Author keywords

First principles calculations; GaN; H; Mg; Nitrides; O; Vacancies

Indexed keywords

COMPUTATIONAL METHODS; ELECTRIC CONDUCTIVITY OF SOLIDS; HYDROGEN; LUMINESCENCE OF SOLIDS; MAGNESIUM; NITRIDES; OXYGEN; PHOTOCONDUCTIVITY; POINT DEFECTS; SEMICONDUCTOR DOPING;

FIRST PRINCIPLES CALCULATIONS; GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0347224543     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.258-263.19     Document Type: Article

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