Electronic defect and contamination monitoring in Si wafers using spectrally integrated photocarrier radiometry

Journal of the Electrochemical Society

Volumn 153, Issue 4, 2006, Pages

  Shaughnessy, Derrick ^a   Mandelis, Andreas ^a  

^a DEPARTMENT OF MECHANICAL AND INDUSTRIAL ENGINEERING   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION (PROCESS); IRON; OPTICAL RESOLVING POWER; PHOTODISSOCIATION; RADIOMETRY;

IMAGE ELECTRONIC DEFECTS; INTEGRATED PHOTOCARRIER RADIOMETRY; SPATIAL RESOLUTION; SURFACE RECOMBINATION VELOCITIES;

SILICON WAFERS;

EID: 33644806475     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2168052     Document Type: Article

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