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Journal of Physics Condensed Matter

Volumn 14, Issue 48, 2002, Pages 13223-13230

Study of the correlation between radiative and non-radiative recombination channels in silicon

(6) Acciarri, M a Cirelli, C a Pizzini, S a Binetti, S a Castaldini, A b Cavallini, A b

a UNIVERSITY OF MILANO BICOCCA (Italy)

b UNIVERSITY OF BOLOGNA (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH FROM MELT; DEEP LEVEL TRANSIENT SPECTROSCOPY; DIFFUSION; ELECTRON ENERGY LEVELS; ELECTRONIC PROPERTIES; HEAT TREATMENT; PHOTOLUMINESCENCE; TEMPERATURE;

CARRIER DIFFUSION; RECOMBINATION CHANNELS; SPECTRAL RESPONSE; VALENCE BAND;

SILICON;

EID: 0037122111 PISSN: 09538984 EISSN: None Source Type: Journal
DOI: 10.1088/0953-8984/14/48/372 Document Type: Article

Times cited : (3)

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