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Volumn 63-64, Issue , 1998, Pages 421-432

Scanning photoluminescence for wafer characterization

Author keywords

Defects; Epilayers; Photoluminescence; Si Wafers

Indexed keywords

CRYSTAL DEFECTS; ETCHING; NONDESTRUCTIVE EXAMINATION; PHOTOLUMINESCENCE; SEMICONDUCTOR GROWTH; SURFACE CLEANING; TRANSMISSION ELECTRON MICROSCOPY;

EID: 17344369135     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/ssp.63-64.421     Document Type: Article
Times cited : (11)

References (18)
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  • 2
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  • 5
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    • M. Tajima, T.Masui and T. Abe, in Semiconductor Si 1990, H. R. Huff, K. G. Barraclough and J. Chikawa, Editors, The Electrochem. Soc. Proceedings Series, Pennington, NJ, PV 90-7, (1990), p.994.
    • (1990) Semiconductor Si 1990 , pp. 994
    • Tajima, M.1    Masui, T.2    Abe, T.3
  • 7
    • 0029419397 scopus 로고
    • Society of Photo-Optical Engineers, Bellingham, WA
    • Y. Hayamizu, R. Hoshi, Y. Kitagawara and T. Takenaka, SPIE Vol. 2638 (1995), p.113, Society of Photo-Optical Engineers, Bellingham, WA).
    • (1995) SPIE , vol.2638 , pp. 113
    • Hayamizu, Y.1    Hoshi, R.2    Kitagawara, Y.3    Takenaka, T.4
  • 8
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    • Patent Number No. 9618897.4
    • Patent Number No. 9618897.4 (1996).
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    • H. R. Huff, U. Gosele, and H. Tsuya, Editors, The Electrochem. Soc. Proceedings Series, Pennington, NJ PV98-1
    • V. Higgs, F. Chin, X.Wang, Y. Yoshida and K. Kitagawara, Semiconductor Si 1998, H. R. Huff, U. Gosele, and H. Tsuya, Editors, The Electrochem. Soc. Proceedings Series, Pennington, NJ PV98-1, (1998), p. 1564.
    • (1998) Semiconductor Si 1998 , pp. 1564
    • Higgs, V.1    Chin, F.2    Wang, X.3    Yoshida, Y.4    Kitagawara, K.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.