Transport properties of ultra thin oxide gated Si SET near room temperature

2005 5th IEEE Conference on Nanotechnology

Volumn 2, Issue , 2005, Pages 750-753

  Wan, Yue Min ^a   Huang, Kuo Dong ^a   Sung, Ching Lung ^b   Hu, Shu Fen ^b  

^a I SHOU UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

Coulomb blockade; Current voltage characteristics; Point contact; Quantum dot; Single electron transistor

Indexed keywords

COULOMB BLOCKADE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON ENERGY LEVELS; GATES (TRANSISTOR); POINT CONTACTS; SEMICONDUCTOR QUANTUM DOTS; SILICON; THIN FILM TRANSISTORS;

NANOELECTRONICS; SILICON TRANSISTORS; SINGLE ELECTRON TRANSISTOR; ULTRATHIN OXIDE;

ULTRATHIN FILMS;

EID: 33746894605     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NANO.2005.1500639     Document Type: Conference Paper

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