Controlled single-electron effects in nonoverlapped ultra-short silicon field effect transistors

IEEE Transactions on Nanotechnology

Volumn 2, Issue 3, 2003, Pages 144-148

  Boeuf, Frédéric ^a   Jehl, Xavier ^b   Sanquer, Marc ^b   Skotnicki, Thomas ^a  

^a STMICROELECTRONICS   (France)

^b CEA GRENOBLE   (France)

Author keywords

Cryogenic electronics; MOSFETs; Nanotechnology; Quantum dots; Quantum effect semiconductor devices

Indexed keywords

CARRIER CONCENTRATION; COULOMB BLOCKADE; DOPING (ADDITIVES); ELECTRON BEAM LITHOGRAPHY; ELECTROSTATICS; ETCHING; MICROELECTRONICS; NANOTECHNOLOGY; OSCILLATIONS; SEMICONDUCTOR QUANTUM DOTS; SILICON;

COULOMB BLOCKADE OSCILLATIONS (CBO); CRYOGENIC ELECTRONICS; ELECTROSTATIC DISORDER; QUANTUM EFFECT SEMICONDUCTOR DEVICES;

MOSFET DEVICES;

EID: 2342607172     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2003.817230     Document Type: Article

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