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Volumn 61, Issue 11, 2000, Pages 7249-7252

Coulomb blockade in low-mobility nanometer size Si MOSFET’s

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Indexed keywords


EID: 0001058596     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.61.7249     Document Type: Article
Times cited : (44)

References (19)
  • 17
    • 0001630055 scopus 로고    scopus 로고
    • For too wide samples, as well as for too long wires, (Formula presented) See W. Poirier, D. Mailly, and M. Sanquer, Phys. Rev. B 59, 10 856 (1999). The prefactor 0.55 is smaller than expected (1) perhaps due to the finite temperature.
    • (1999) Phys. Rev. B , vol.59 , pp. 10856
    • Poirier, W.1    Mailly, D.2    Sanquer, M.3
  • 19


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.