Initial reactive sticking coefficient of O2 on Si(111)-7 × 7 at elevated temperatures

Surface Science

Volumn 351, Issue 1-3, 1996, Pages 64-74

  Shklyaev, A A ^a,b   Suzuki, Takanori ^a  

^a INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

Adsorption kinetics; Chemisorption; Models of surface chemical reactions; Oxidation; Oxygen; Second harmonic generation; Silicon

Indexed keywords

ACTIVATION ENERGY; CHEMISORPTION; GAS ADSORPTION; HIGH TEMPERATURE EFFECTS; MATHEMATICAL MODELS; OXIDATION; OXYGEN; PRESSURE EFFECTS; REACTION KINETICS; SECOND HARMONIC GENERATION; THERMAL EFFECTS;

INITIAL REACTIVE STICKING COEFFICIENT; OXIDE GROWTH; SILICON OXIDE;

SEMICONDUCTING SILICON;

EID: 0030141999     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(95)01260-5     Document Type: Article

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