Nanometer-scale Si selective epitaxial growth on Si(001) surfaces using the thermal decomposition of ultrathin oxide films

Applied Physics Letters

Volumn 70, Issue 21, 1997, Pages 2807-2809

  Fujita, Ken ^a   Watanabe, Heiji ^a   Ichikawa, Masakazu ^a  

^a JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0040858723     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119065     Document Type: Article

References (15)

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