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Volumn 385, Issue 2-3, 1997, Pages

Atomic-step observation at buried SiO2/Si(111) interfaces by scanning reflection electron microscopy

Author keywords

Crystalline amorphous interfaces; Oxidation; Reflection electron microscopy; Scanning tunneling microscopy; Silicon; Silicon oxide; X ray photoelectron spectroscopy

Indexed keywords

AMORPHOUS MATERIALS; CHEMICAL BONDS; CRYSTALLINE MATERIALS; MICROSCOPIC EXAMINATION; OXIDATION; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICA; STRESS ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 0031200217     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(97)00347-6     Document Type: Article
Times cited : (44)

References (21)
  • 14
    • 0024715611 scopus 로고
    • M. Ichikawa, T. Doi, in: P.K. Larsen, P.J. Dobson (Eds.), Reflection High Energy Electron Diffraction and Reflection Electron Imaging of Surfaces, NATO ASI Series, Plenum Publishing Corporation, 1988, Vol. 188, p. 343; M. Ichikawa, Mater. Sci. Rep. 4 (1989) 147.
    • (1989) Mater. Sci. Rep. , vol.4 , pp. 147
    • Ichikawa, M.1
  • 19
    • 0000233879 scopus 로고
    • Selective oxidation models at interfacial steps, which consider the emission of Si interstitials, were previously suggested. For example, B. Leroy, Philos. Mag. B55 (1987) 159.
    • (1987) Philos. Mag. , vol.B55 , pp. 159
    • Leroy, B.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.