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Volumn 52, Issue 6, 2005, Pages 2554-2561

Semiconductor materials and detectors for future very high luminosity colliders

Author keywords

Accelerators; Neutron radiation effects; Proton radiation effects; Radiation detectors; Semiconductor diodes

Indexed keywords

EPITAXIAL GROWTH; PARTICLE ACCELERATORS; RADIATION DETECTORS; RADIATION HARDENING; SEMICONDUCTOR DIODES; SILICON;

EID: 33144456000     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2005.860703     Document Type: Conference Paper
Times cited : (11)

References (41)
  • 2
    • 0041887297 scopus 로고    scopus 로고
    • Silicon sensors development for the CMS pixel system
    • K. Arndt et al., "Silicon sensors development for the CMS pixel system," Nucl. Instrum. Methods Phys. Res. A, vol. 511, pp. 106-111, 2003.
    • (2003) Nucl. Instrum. Methods Phys. Res. A , vol.511 , pp. 106-111
    • Arndt, K.1
  • 3
    • 4243069399 scopus 로고    scopus 로고
    • Radiation hardness performance of ATLAS pixel tracker
    • C. Troncon, "Radiation hardness performance of ATLAS pixel tracker," Nucl. Instrum. Methods Phys. Res. A, vol. 530, pp. 65-70, 2004.
    • (2004) Nucl. Instrum. Methods Phys. Res. A , vol.530 , pp. 65-70
    • Troncon, C.1
  • 4
    • 33144485362 scopus 로고    scopus 로고
    • Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders, Feb. 2002. R&D Proposal, CERN-LHCC 2002-003
    • Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders, Feb. 2002. R&D Proposal, CERN-LHCC 2002-003.
  • 5
    • 33947281483 scopus 로고    scopus 로고
    • CERN, Geneva, Switzerland, CERN-LHCC-2004-031 and LHCC-RD-005
    • "RD50 Status Report 2004," CERN, Geneva, Switzerland, CERN-LHCC-2004-031 and LHCC-RD-005.
    • RD50 Status Report 2004
  • 6
    • 0032632271 scopus 로고    scopus 로고
    • Leakage current of hadron irradiated silicon detectors - Material dependence
    • M. Moll, E. Fretwurst, and G. Lindström, "Leakage current of hadron irradiated silicon detectors - Material dependence," Nucl. Instrum. Methods Phys. Res. A, vol. 426, pp. 87-93, 1999.
    • (1999) Nucl. Instrum. Methods Phys. Res. A , vol.426 , pp. 87-93
    • Moll, M.1    Fretwurst, E.2    Lindström, G.3
  • 7
    • 0038382314 scopus 로고    scopus 로고
    • Review of displacement damage effects in silicon devices
    • Jun.
    • J. R. Srour, C. J. Marshall, and P. W. Marshall, "Review of displacement damage effects in silicon devices," IEEE Trans. Nucl. Sci., vol. 50, no. 3, pp. 653-670, Jun. 2003.
    • (2003) IEEE Trans. Nucl. Sci. , vol.50 , Issue.3 , pp. 653-670
    • Srour, J.R.1    Marshall, C.J.2    Marshall, P.W.3
  • 9
    • 0027556306 scopus 로고
    • Temperature effects on radiation damage to silicon detectors
    • E. Barberis et al., "Temperature effects on radiation damage to silicon detectors," Nucl. Instrum. Methods Phys. Res. A, vol. 326, pp. 373-380, 1993.
    • (1993) Nucl. Instrum. Methods Phys. Res. A , vol.326 , pp. 373-380
    • Barberis, E.1
  • 10
    • 8444228264 scopus 로고    scopus 로고
    • Lithium ion irradiation of standard and oxygenated silicon diodes
    • Oct.
    • A. Candelori et al., "Lithium ion irradiation of standard and oxygenated silicon diodes," IEEE Trans. Nucl. Sci., vol. 51, no. 5, pp. 2865-2871, Oct. 2004.
    • (2004) IEEE Trans. Nucl. Sci. , vol.51 , Issue.5 , pp. 2865-2871
    • Candelori, A.1
  • 11
    • 8344227845 scopus 로고    scopus 로고
    • High-energy electron irradiation of different silicon materials
    • Oct.
    • S. Dittongo et al., "High-energy electron irradiation of different silicon materials," IEEE Trans. Nucl. Sci., vol. 51, no. 5, pp. 2794-2798, Oct. 2004.
    • (2004) IEEE Trans. Nucl. Sci. , vol.51 , Issue.5 , pp. 2794-2798
    • Dittongo, S.1
  • 13
    • 0033889134 scopus 로고    scopus 로고
    • Investigation on the improved radiation hardness of silicon detectors with high oxygen concentration
    • M. Moll, E. Fretwurst, and G. Lindstöm, "Investigation on the improved radiation hardness of silicon detectors with high oxygen concentration," Nucl. Instrum. Methods Phys. Res. A, vol. 439, pp. 282-292, 2000.
    • (2000) Nucl. Instrum. Methods Phys. Res. A , vol.439 , pp. 282-292
    • Moll, M.1    Fretwurst, E.2    Lindstöm, G.3
  • 15
    • 0042825850 scopus 로고    scopus 로고
    • Radiation hardness of silicon detectors for high energy physics applications
    • Aug.
    • A. Candelori et al., "Radiation hardness of silicon detectors for high energy physics applications," IEEE Trans. Nucl. Sci., vol. 50, no. 4, pp. 1121-1128, Aug. 2003.
    • (2003) IEEE Trans. Nucl. Sci. , vol.50 , Issue.4 , pp. 1121-1128
    • Candelori, A.1
  • 17
    • 0942299037 scopus 로고    scopus 로고
    • Radiation hardness of czochralski silicon, float zone silicon and oxygenated float zone silicon studied by low energy protons
    • J. Härkönen et al., "Radiation hardness of czochralski silicon, float zone silicon and oxygenated float zone silicon studied by low energy protons," Nucl. Instrum. Methods Phys. Res. A, vol. 518, pp. 346-348, 2004.
    • (2004) Nucl. Instrum. Methods Phys. Res. A , vol.518 , pp. 346-348
    • Härkönen, J.1
  • 18
    • 4444337526 scopus 로고    scopus 로고
    • Radiation hardness of high resistivity magnetic czochralski silicon detector after gamma, neutron and proton radiations
    • Aug.
    • Z. Li et al., "Radiation hardness of high resistivity magnetic czochralski silicon detector after gamma, neutron and proton radiations," IEEE Trans. Nucl. Sci., vol. 51, no. 5, pp. 1901-1908, Aug. 2004.
    • (2004) IEEE Trans. Nucl. Sci. , vol.51 , Issue.5 , pp. 1901-1908
    • Li, Z.1
  • 19
    • 0035399362 scopus 로고    scopus 로고
    • Radiation hard silicon detectors - Developments by the RD48 (ROSE) collaboration
    • G. Lindstrom et al., "Radiation hard silicon detectors - Developments by the RD48 (ROSE) collaboration," Nucl. Instrum. Methods Phys. Res. A, vol. 466, pp. 308-326, 2001.
    • (2001) Nucl. Instrum. Methods Phys. Res. A , vol.466 , pp. 308-326
    • Lindstrom, G.1
  • 20
    • 33144490399 scopus 로고    scopus 로고
    • Development of Czochralski silicon particle detectors
    • INFN National Laboratory of Legnaro, LNL-INFN (REP)-203/2004, ISBN 88-7337-007-1, Padova, Italy, Apr. 1-2
    • nd SIRAD Workshop, INFN National Laboratory of Legnaro, LNL-INFN (REP)-203/2004, ISBN 88-7337-007-1, Padova, Italy, Apr. 1-2, 2004.
    • (2004) nd SIRAD Workshop
    • Härkönen, J.1    Luukka, P.2    Tuovinen, E.3    Tuominen, E.4
  • 21
    • 0035723280 scopus 로고    scopus 로고
    • Low- And high-energy proton irradiation of standard and oxygenated silicon diodes
    • Dec.
    • A. Candelori et al., "Low- and high-energy proton irradiation of standard and oxygenated silicon diodes," IEEE Trans. Nucl. Sci., vol. 48, no. 6, pp. 2270-2277, Dec. 2001.
    • (2001) IEEE Trans. Nucl. Sci. , vol.48 , Issue.6 , pp. 2270-2277
    • Candelori, A.1
  • 24
    • 0037474981 scopus 로고    scopus 로고
    • Second-order generation of point defects in gamma-irradiated float-zone silicon, an explanation for type inversion
    • _, "Second-order generation of point defects in gamma-irradiated float-zone silicon, an explanation for type inversion," Appl. Phys. Lett., vol. 82, no. 13, pp. 2169-2171, 2003.
    • (2003) Appl. Phys. Lett. , vol.82 , Issue.13 , pp. 2169-2171
  • 25
    • 0036533748 scopus 로고    scopus 로고
    • Effective trapping time of electrons and holes in different silicon materials irradiated with neutrons, protons and pions
    • G. Kramberger, V. Cindro, I. Mandić, M. Mikǔz, and M. Zavrtanik, "Effective trapping time of electrons and holes in different silicon materials irradiated with neutrons, protons and pions," Nucl. Instrum. Methods Phys. Res. A, vol. 481, pp. 297-305, 2002.
    • (2002) Nucl. Instrum. Methods Phys. Res. A , vol.481 , pp. 297-305
    • Kramberger, G.1    Cindro, V.2    Mandić, I.3    Mikǔz, M.4    Zavrtanik, M.5
  • 26
    • 4243196800 scopus 로고    scopus 로고
    • Fabrication of PIN diode detectors on thinned silicon wafers
    • S. Ronchin et al., "Fabrication of PIN diode detectors on thinned silicon wafers," Nucl. Instrum. Methods Phys. Res. A, vol. 530, pp. 134-138, 2004.
    • (2004) Nucl. Instrum. Methods Phys. Res. A , vol.530 , pp. 134-138
    • Ronchin, S.1
  • 28
    • 27644492955 scopus 로고    scopus 로고
    • Radiation hardness and charge collection efficiency of lithium irradiated thin silicon diodes
    • M. Boscardin et al., "Radiation hardness and charge collection efficiency of lithium irradiated thin silicon diodes," IEEE Trans. Nucl. Sci. vol. 52, no. 4, pp. 1048-1053, 2005.
    • (2005) IEEE Trans. Nucl. Sci. , vol.52 , Issue.4 , pp. 1048-1053
    • Boscardin, M.1
  • 29
    • 0344065671 scopus 로고    scopus 로고
    • Superior radiation tolerance of thin epitaxial silicon detectors
    • G. Kramberger et al., "Superior radiation tolerance of thin epitaxial silicon detectors," Nucl. Instrum. Methods Phys. Res. A, vol. 515, pp. 665-670, 2003.
    • (2003) Nucl. Instrum. Methods Phys. Res. A , vol.515 , pp. 665-670
    • Kramberger, G.1
  • 32
    • 33144487775 scopus 로고    scopus 로고
    • Charge collection properties of heavily irradiated epitaxial silicon detectors
    • Florence, Italy, Oct. 10-13. To be published in Nucl. Instrum. Methods Phys. Res. A.
    • G. Kramberger, V. Cindro, I. Dolenc, E. Fretwurst, G. Lindström, and I. Mandić et al., "Charge collection properties of heavily irradiated epitaxial silicon detectors," presented at the RESMDD 2004 Conf., Florence, Italy, Oct. 10-13, 2004. To be published in Nucl. Instrum. Methods Phys. Res. A.
    • (2004) RESMDD 2004 Conf.
    • Kramberger, G.1    Cindro, V.2    Dolenc, I.3    Fretwurst, E.4    Lindström, G.5    Mandić, I.6
  • 34
    • 0942266477 scopus 로고    scopus 로고
    • First results on charge collection efficiency of heavily irradiated microstrip sensors fabricated on oxygenated p-type silicon
    • G. Casse, P. P. Allport, S. Marti i Garcia, M. Lozano, and P. R. Turner, "First results on charge collection efficiency of heavily irradiated microstrip sensors fabricated on oxygenated p-type silicon," Nucl. Instrum. Methods Phys. Res. A, vol. 518, pp. 340-342, 2004.
    • (2004) Nucl. Instrum. Methods Phys. Res. A , vol.518 , pp. 340-342
    • Casse, G.1    Allport, P.P.2    Marti i Garcia, S.3    Lozano, M.4    Turner, P.R.5
  • 35
    • 9544253900 scopus 로고    scopus 로고
    • Performances of miniature microstrip detectrors made on oxygen enriched p-type substrates after very high proton irradiation
    • _, "Performances of miniature microstrip detectrors made on oxygen enriched p-type substrates after very high proton irradiation," Nucl. Instrum. Methods Phys. Res. A, vol. 535, pp. 362-365, 2004.
    • (2004) Nucl. Instrum. Methods Phys. Res. A , vol.535 , pp. 362-365
  • 37
    • 20444490419 scopus 로고    scopus 로고
    • Analysis and simulations of charge collection efficiency in silicon thick detectors
    • M. Petasecca, F. Moscatelli, and G. U. Pignatel, "Analysis and simulations of charge collection efficiency in silicon thick detectors," Nucl. Instrum. Methods Phys. Res. A, vol. A546, pp. 291-295, 2005.
    • (2005) Nucl. Instrum. Methods Phys. Res. A , vol.A546 , pp. 291-295
    • Petasecca, M.1    Moscatelli, F.2    Pignatel, G.U.3
  • 38
    • 0031209562 scopus 로고    scopus 로고
    • 3D - A proposed new architecture for solid-state radiation detectors
    • S. I. Parker, C. J. Kenney, and J. Segal, "3D - A proposed new architecture for solid-state radiation detectors," Nucl. Instrum. Methods Phys. Res. A, vol. 395, pp. 328-343, 1997.
    • (1997) Nucl. Instrum. Methods Phys. Res. A , vol.395 , pp. 328-343
    • Parker, S.I.1    Kenney, C.J.2    Segal, J.3
  • 40
    • 0036475284 scopus 로고    scopus 로고
    • Novel prototype Si detector development and processing at BNL
    • Z. Li et al., "Novel prototype Si detector development and processing at BNL," Nucl. Instrum. Methods Phys. Res. A, vol. 478, pp. 303-310, 2002.
    • (2002) Nucl. Instrum. Methods Phys. Res. A , vol.478 , pp. 303-310
    • Li, Z.1
  • 41
    • 0742320649 scopus 로고    scopus 로고
    • Novel silicon Stripixel detectors: Concept, simulation, design, and fabrication
    • Z. Li, "Novel silicon Stripixel detectors: Concept, simulation, design, and fabrication," Nucl. Instrum. Methods Phys. Res. A, vol. 518, pp. 738-753, 2004.
    • (2004) Nucl. Instrum. Methods Phys. Res. A , vol.518 , pp. 738-753
    • Li, Z.1


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