First results on charge collection efficiency of heavily irradiated microstrip sensors fabricated on oxygenated p-type silicon

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 518, Issue 1-2, 2004, Pages 340-342

  Casse, G ^a   Allport, P P ^a   Marti i Garcia S ^b   Lozano, M ^c   Turner, P R ^a  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

^b CSIC   (Spain)

^c INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

Author keywords

Charge collection; Radiation hardness; Silicon microstrip detectors

Indexed keywords

CRYSTALS; DOSIMETRY; ELECTRIC POTENTIAL; FABRICATION; IRRADIATION; MICROSTRIP DEVICES; RADIATION DETECTORS; RADIATION HARDENING; SILICA; SUBSTRATES;

CHARGE COLLECTION; RADIATION HARDNESS; SILICON MICROSTRIP DETECTORS;

SILICON WAFERS;

EID: 0942266477     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2003.11.015     Document Type: Conference Paper

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6. Martí y Garcia S., et al. Nucl. Instr. and Meth. A. 473:2001;128.