Radiation hardness of silicon detectors for high-energy physics applications

IEEE Transactions on Nuclear Science

Volumn 50, Issue 4 II, 2003, Pages 1121-1128

  Candelori, Andrea ^a   Bisello, Dario ^a   Rando, Riccardo ^a   Kaminski, Alexander ^a   Wyss, Jeff ^b,c   Litovchenko, Alexei ^a   Dalla Betta, Gianfranco ^d   Lozano, Manuel ^e   Boscardin, Maurizio ^f   Martínez, Carlos ^e   Ullán, Miguel ^e   Zorzi, Nicola ^f  

^a UNIVERSITY OF PADOVA   (Italy)

^b UNIVERSITY OF CASSINO AND SOUTHERN LAZIO   (Italy)

^c INFN SEZIONE DI PISA   (Italy)

^d UNIVERSITY OF TRENTO   (Italy)

^e UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^f ITC IRST   (Italy)

Author keywords

Diodes; Neutron radiation effects; Oxygenation; Proton radiation effects; Radiation detectors

Indexed keywords

CURRENT DENSITY; IRRADIATION; LEAKAGE CURRENTS; RADIATION DETECTORS; RADIATION HARDENING; SILICON;

NEUTRON RADIATION EFFECTS;

HIGH ENERGY PHYSICS;

EID: 0042825850     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2003.814573     Document Type: Conference Paper

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