Swift heavy ion-induced interface mixing in In/Sb

Semiconductor Science and Technology

Volumn 21, Issue 3, 2006, Pages 382-386

  Sreekumar, R ^a   Kumar, P M Ratheesh ^a   Kartha, C Sudha ^a   Vijayakumar, K P ^a   Kabiraj, D ^b   Khan, S A ^b   Avasthi, D K ^b   Kashiwaba, Y ^c   Abe, T ^c  

^a Department of Polymer Science and Rubber Technology   (India)

^b INTER UNIVERSITY ACCELERATOR CENTRE   (India)

^c IWATE UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ION BEAMS; SILICON; X RAY PHOTOELECTRON SPECTROSCOPY;

ION BEAM MIXING; IRRADIATION DOSE; SI SUBSTRATE;

HEAVY IONS;

EID: 32944473652     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/21/3/030     Document Type: Article

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