Magneto-resistance effect in InSb thin film grown using molecular beam epitaxy

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 765-768

  Okamoto, Atsushi ^a   Yoshida, Takashi ^b   Muramatsu, Shogo ^b   Shibasaki, Ichiro ^a  

^a ASAHI CHEMICAL INDUSTRY CO   (Japan)

^b Asahikasei Electronics Co   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CRYSTAL IMPURITIES; FILM GROWTH; MAGNETIC DEVICES; MAGNETORESISTANCE; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SENSORS;

MAGNETIC SENSORS;

SEMICONDUCTING FILMS;

EID: 0032642301     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01466-3     Document Type: Article

References (4)

1. Shibasaki I. J. Crystal Growth. 175/176:1997;13.
2. I. Shibasaki, Proceedings of the Spring Conference of the Chemical Society of Japan, No. III, 1984, p. 1784.
3. Heremans J., Partin A.L., Thrush C.M., Green L. Semicond. Sci. Technol. 8:1993;S424-S430.
4. T. Yoshida, A. Okamoto, S. Muramatsu, N. Kuze, I. Shibasaki, Proceedings of International Conference on Solid-State Sensors and Actuators, 1997, p. 417.