Properties of β-FeSi2 grown by combined ion irradiation and annealing of Fe/Si bilayers

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 175-177, Issue , 2001, Pages 309-313

  Milosavljevic, M ^a   Shao, G ^a,b   Gwilliam, R M ^c   Jeynes, C ^a   McKinty, C N ^a   Homewood, K P ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b Gas Turbine Engineering Group   (United Kingdom)

^c NONE

Author keywords

HRTEM; Ion implantation; Iron disilicide; Photo absorption; Silicides

Indexed keywords

HIGH RESOLUTION ELECTRON MICROSCOPY; ION IMPLANTATION; IRON COMPOUNDS; LIGHT ABSORPTION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

IRON DISILICIDES;

SUPERCONDUCTING FILMS;

EID: 0035302963     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(00)00639-X     Document Type: Conference Paper

References (12)