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IEEE Photonics Technology Letters

Volumn 8, Issue 5, 1996, Pages 673-675

InSb infrared photodetectors on Si substrates grown by molecular beam epitaxy

(5) Michel, E a,b Xu, J b Kim, J D b Ferguson, I a,b Razeghi, M a,b

a IEEE

b Northwestern University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARRAYS; BERYLLIUM; CALCULATIONS; CARRIER CONCENTRATION; ELECTRIC PROPERTIES; ELECTRON DIFFRACTION; MOLECULAR BEAM EPITAXY; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; TELLURIUM;

INFRARED PHOTODETECTORS; JOHNSON NOISE LIMITED DETECTIVITY; MONOLITHIC FOCAL PLANE ARRAYS; VOLTAGE RESPONSIVITY;

INFRARED DETECTORS;

EID: 0030150081 PISSN: 10411135 EISSN: None Source Type: Journal
DOI: 10.1109/68.491591 Document Type: Article

Times cited : (42)

References (9)

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3
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