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Volumn 24, Issue 5, 2001, Pages 445-453

Growth and characterization of indium antimonide and gallium antimonide crystals

Author keywords

Chemical etching; Crystallization; Defect density; Hall measurements; Photoluminescene (PL) spectra; Synthesis

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY MEASUREMENT; ENERGY DISPERSIVE SPECTROSCOPY; ETCHING; GALLIUM COMPOUNDS; HALL EFFECT; PHOTOLUMINESCENCE; SYNTHESIS (CHEMICAL); TRANSPORT PROPERTIES; X RAY DIFFRACTION ANALYSIS;

EID: 0035475719     PISSN: 02504707     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02706714     Document Type: Article
Times cited : (43)

References (46)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.