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Volumn 24, Issue 5, 2001, Pages 445-453
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Growth and characterization of indium antimonide and gallium antimonide crystals
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Author keywords
Chemical etching; Crystallization; Defect density; Hall measurements; Photoluminescene (PL) spectra; Synthesis
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Indexed keywords
CRYSTAL DEFECTS;
CRYSTAL GROWTH;
CRYSTAL STRUCTURE;
ELECTRIC CONDUCTIVITY MEASUREMENT;
ENERGY DISPERSIVE SPECTROSCOPY;
ETCHING;
GALLIUM COMPOUNDS;
HALL EFFECT;
PHOTOLUMINESCENCE;
SYNTHESIS (CHEMICAL);
TRANSPORT PROPERTIES;
X RAY DIFFRACTION ANALYSIS;
BRIDGMAN TECHNIQUES;
CHEMICAL ETCHING;
DEFECT DENSITY;
DOPANTS;
GALLIUM ANTIMONIDE;
HALL MEASUREMENT;
INDIUM ANTIMONIDE;
PHOTOLUMINESCENCE SPECTRA;
INDIUM COMPOUNDS;
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EID: 0035475719
PISSN: 02504707
EISSN: None
Source Type: Journal
DOI: 10.1007/BF02706714 Document Type: Article |
Times cited : (43)
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References (46)
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